Robert Glosser

Professor - Physics
Tags: Physics

Professional Preparation

University of Chicago - 1967
University of Chicago - 1962
Massachusetts Institute of Technology - 1959

Research Areas

Research Interests

During my academic career, I have mentored 25 students to their Ph.D. (22 at UTD). My experimental work centers on the measurement of optical properties of solids with emphasis on modulation spectroscopy, Raman scattering and photoluminescence. Materials recently or currently studied include III-V compounds, both wide and narrow band gap semiconductors, elemental amorphous materials, nanomaterials, semiconducting silicides, thermoelectric materials and photonic crystals.

1. Properties of metal silicides. These have importance as silicon based light emitting devices. An ion-implanted FeSi2 device, emitting light at 1.5 microns, was developed at the University of Surrey, England. It is exciting because a silicon based infrared emitter is economically desirable for long distance fiber optic communication. This work has been the trigger for a full exploration of the electronic and vibrational properties of semiconducting silicides including FeSi2, OsSi2 and Ru2Si3. We have studied these materials by Raman and photoreflectance spectroscopies.
2. Wide band gap semiconductors, particularly GaN and AlN. These are of interest for blue and ultraviolet LEDs and lasers. We have a vacuum ultraviolet modulated reflectivity spectrometer with which we have been studying these materials out to 10 eV.
3. Narrow gap semiconductors, particularly InGaSb alloys. Moving toward the other end of the spectrum we have developed an apparatus that is capable of measuring modulated reflectivity (photoreflectance or electroreflectance) signals in the mid infrared. At this point, we have demonstrated our ability to measure photoreflectance signals down to 0.5 eV.
4. We are developing photoreflectance as a contactless technique for studying defect and surface states in semiconductors. It is basically an optical deep-level-transient-spectroscopy (DLTS) technique and requires measurements of photoreflectance spectra as a function of modulation frequency and temperature.
5. In collaboration with the NanoTech Institute at UTD, we are investigating hydrogen storage properties of nanotubes.

Student Involvement-Present and Past.
In the context of local ties with the semiconductor industry, several of the UTD Ph.D. graduates from our group deserve particular mention. Dr. Gary Frazier is the manager of the Nanoelectronics group at Raytheon. Prior to assuming his managerial responsibilities, he was a TI Fellow. Dr. Joe Estrera is Chief Technology Officer and Director of Engineering for Northrop Grumman in Garland, Texas. Also, Dr. Tim Ostromek, Dr. Adriana Giordana and Dr. Loig Bourree are research scientists at Northrop Grumman. Dr. Glen Birdwell is a research scientist at MEMC in Sherman, Texas. Dr. Steve Collins is manager of research programs for the NanoTech Institute at UTD. Currently, Justin Schaefers is working on a collaborative Ph.D. project with Northrop Grumman.


Self-assembly of colloidal silica into opals with large ordered single crystals. Preston B. Landon, Cody Gilleland, Brandon Jarvis, Brian D. Waters, Kanzan Inoue and R. Glosser, Colloids and Surfaces A: Physicochem. Eng. Aspects. 259, 35 (2005). 2005 - Publication
Effect of modulation duty cycle on the amplitude of photoreflectance. Esam Al-Arfaj, R. Glosser, K. Alavi, E.A. Beam III, Canadian Journal of Physics. 83, 1029 (2005). 2005 - Publication
"Excitonic transitions in β-FeSi2 epitaxial films and single crystals.” A.G. Birdwell, T.J. Shaffner, D. Chandler-Horowitz, G.H. Buh, M. Rebien, W. Henrion, P. Stauß, G. Behr, L. Malikova, F.H. Pollak, C. Littler, R. Glosser and S. Collins, Journal of Applied Physics 95, 2441 (2004). 2004 - Publication
Optical characterization of n-and p-doped 4H-SiC by electroreflectance spectroscopy.” Gazi Demir, Timothy E. Renfro, R. Glosser, and S.E. Saddow, Applied Physics Letters 84, 3540 (2004). 2004 - Publication
(Invited Paper) “Self-assembly methods for photonic crystals.” Preston B. Landon, R. Glosser and Anvar A. Zakhidov, in Proceedings of Integrated Photonics Research Conference, June, 2003. Trends in Optics and Photonics 91, 52 (2003). 2003 - Publication
“Electroreflectance of hexagonal gallium nitride at the fundamental and E1 spectral regions.” M.F. Al-Kuhaili, R. Glosser, A.E. Wickenden, D.D. Koleske, and R.L. Henry, Applied Physics Letters 82, 1203 (2003). 2003 - Publication
"Raman and Magneto Transport Studies of MBE Grown beta-FeSi2, beta-(Fe1-xCrx)Si2, and beta-(Fe1-xCox)Si2," A. Srujana, A. Wadhawan, K. Srikala, B.P. Gorman, R.J. Cottier, Wei Zhao, C.L. Littler, J.M. Perez, and T.D. Golding, W. Henrion, M. Rebien, P. Stauss and R. Glosser, (Paper presented at the MRS meeting, Boston, MA 2-5 December 2002) Proceedings of the MRS 744 (in press). 2002 - Publication
“Characterization of InGaSb by Photoreflectance Spectroscopy.” S. Collins, A.G. Birdwell, R. Glosser, and Brian R. Bennett, Journal of Applied Physics 91, 1175 (2002). 2002 - Publication
“Photoreflectance Study of Ion Beam Synthesized beta-FeSi2.” A.G. Birdwell, S. Collins, R. Glosser, D.N. Leong, and K.P. Homewood, Journal of Applied Physics 91, 1219 (2002). 2002 - Publication


Northrop Grumman/Litton, Garland, Texas [2002–Present]
Northrop Grumman/Litton, Garland, Texas [2001–2018]
on Special Faculty Development Assignment from UTD and appointed as Visiting Professorial Research Fellow under an award from the UK Engineering and Physical Science Research Council
University of Surrey, Guildford, Surrey, England [1996–1997]
Litton/Varo, Garland, Texas [1993–2018]
Varo/IMO, Garland, Texas [1992–2018]
Varo/IMO, Garland, Texas [1991–2018]
ASEE Navy Summer Faculty Fellow
Naval Research Laboratory, Washington, D.C., [1990–2018]
The University of Texas at Dallas [1990–Present]
ASEE Navy Summer Faculty Grant
Naval Research Laboratory, Washington, D.C., [1986–2018]
Varo, Inc., Garland, Texas [1984–2018]

Additional Information

Ph.D. Dissertation Directed
  • Beyond Band Gap Photoreflectance Study on PHEMT Device Structures by Prem Lionel Stephan Thamban, The University of Texas at Dallas (December 2005)
  • Nano-Engineering of Colloidal Particles, Synthetic Biomimetic Blood Cells, Synthetic Opals, Photonic Crystals and the Physics of Self-Assembling Nanostructures by Preston Landon, The University of Texas at Dallas (August 2005).
  • Defect and Interface States as Measured by Photoreflectance by Mohammed Al- Zamil, The University of Texas at Dallas. (May 2005).
  • Electroreflectance of Wurtzite Gallium Nitride, Aluminum Gallium Nitride and Aluminum Nitride by Timothy Edward Renfro, The University of Texas at Dallas. (December 2004).
  • Optical Characterization of 4H Silicon Carbide Polytype by Electromodulation Spectroscopy by Gazi Demir, The University of Texas at Dallas. (December 2004).
  • Growth and Characterization of In1-xGaxAs Photocathodes for Extended Near Infrared Imaging by Loig Erwan Richard Bourree, The University of Texas at Dallas. (April 2003).
  • Characterization of Deep-Levels in Semiconductors by Photoreflectance Spectroscopy by Esam Al Arfaj, The University of Texas at Dallas. (June, 2001).
  • "Optical Characterization of Strained In1-xGaxSb by Photoreflectance Spectroscopy" by Steve Collins, The University of Texas at Dallas. (April, 2001).
  • "Electrical and Optical Characterization of Non-Crystalline Silicon Used as Infrared Detector at Room Temperature" by Stefano Pitassi, The University of Texas at Dallas. (April, 2001). Co-chaired with Professor Roy Chaney.
  • "Optical Properties of b-FeSi2, Ru2Si3, and OsSi2: Semiconducting Transition Metal Silicides" by Anthony Glen Birdwell, The University of Texas at Dallas. (January 2001).
  • "Electroreflectance of Gallium Nitride and Aluminum Gallium Nitride" by Mohammad F. Al-Kuhaili, The University of Texas at Dallas. (August 1999).
  • Electro-optic Characterization of Excitonic Transitions and Electric Fields in In0.14Ga0.86As/GaAs Strained Layer Multiple Quantum Wells by Timothy Everett Ostromek, The University of Texas at Dallas. (August 1996).
  • Photoreflectance Studies of Zn-Doped AlxGa1-xAs at the E1 Transition Energy by Abdul- Basit Ali Saleh, The University of Texas at Dallas. (August 1995).
  • Optical Characterization and Photoluminescence Study of Porous Silicon by Patrick Duane Stevens, The University of Texas at Dallas. (March 1995).
  • High Precision Correlation of Fundamental Material Parameters for Bulk InGaAs on InP and InGaAs HEMT Structures using Photoluminescence, X-ray Diffraction, Photoreflectance and Raman Spectroscopy by Joseph P. Estrera, The University of Texas at Dallas. (September 1992).
  • Characterization of Semi-insulating GaAs by Photoreflectance and Photoluminescence by Christopher M. Durbin, The University of Texas at Dallas. (August 1992).
  • Photoreflectance of Doped GaAs Beyond the Band Gap by Ali Badakhshan, The University of Texas at Dallas. (August 1990).
  • Photoreflectance Studies of Silicon on Insulator Structures by Adriana Giordana, The University of Texas at Dallas. (August 1990).
  • Characterization of Thin Films of the Palladium-Silver-Hydrogen System by Jaime Velasco Villalobos, The University of Texas at Dallas. (November 1988).
  • Piezoreflectance Studies of Polyacetylene Films by Richard L. Tober, The University of Texas at Dallas. (January 1986).
  • Measurements of the Pressure-Concentration and Pressure-Resistance Temperature Relations of Thin Films of the Palladium-Hydrogen System by Ming-Way Lee, The University of Texas at Dallas. (August 1985).
  • Thin Film Properties of the Palladium-Hydrogen System by Gary A. Frazier, The University of Texas at Dallas. (December 1984).
  • The Electroreflectance of PbS, PbTe and PbSe by Brian G. Rennex, The University of Maryland. (December 1976).
  • The Measurement and Analysis of the Strain Optic Spectra of Gold by P. Szcepanek, The University of Maryland, Technical Report 73-123. (May 1973).
  • A Study of the Optical and Electrical Properties of Amorphous Si and Their Dependence Upon Thermal History by Adam J. Lewis, University of Maryland, Technical Report 73-78. (December 1972).
  • MBE Grown Alkali Antimonide Photocathodes. R. Glosser, J.P. Estrera, L.E. Bourree, through Litton Systems, Inc. Awarded January 31, 2006, Patent Number 6,992,441 B2
  • An Optical Non-destructive Technique for Measuring Net Carrier Concentration in Semiconductors. N. Bottka, D. K. Gaskill and R. Glosser, through Department of the Navy. Awarded September 4, 1990, Patent Number 4953983.
Scientific Recgnition
Listed in American Men and Women of Science


Optical Characterization of III-V Compounds.
$13,506 - Varo/IMO [1994–1994]
Photoreflectance Characterization of SIMOX.
$20,000 - Texas instruments, Inc. [1991–1994]
High Precision, Nondestructive Characterization of Bulk InGaAs and InAlAs/InGaAs in HEMT Structures.
$10,150 - Texas Instruments, Inc. [1991–1991]
Optical Characterization of Semiconductor Materials.
$155,179 - Varo/IMO [1987–1994]
Liquid Phase Epitaxial Growth and Optical Characterization of III-V Compound Semiconductors.
$5,504 - Varo/IMO [1987–1987]