C.C.Cheng, P.A.Taylor, R.M.Wallace, H.Gutleben, L.Clemen, M.L.Colaianni, P.J.Chen, W.H.Weinberg, W.J.Choyke and J.T.Yates, Jr., Hydrocarbon surface chemistry on Si(100), Thin Solid Films 225 196 (1993). 1993 - Publication
D.Weirauch, R.L.Strong, R.M.Wallace and D.Chopra, An evaluation of the sessile drop technique for the study of (Hg,Cd)Te surfaces, Semiconductor Science and Technology 8 916 (1993). 1993 - Publication
L.Clemen, R.M.Wallace, P.A.Taylor, M.J.Dresser, W.J.Choyke, W.H.Weinberg and J.T.Yates, Jr., Adsorption and thermal behavior of ethylene on Si(100)-(2x1), Surface Science 268 205 (1992) (131 independent citations as of Feb. 2005). 1992 - Publication
P.A.Taylor, R.M.Wallace, C.C.Cheng, W.H.Weinberg, M.J.Dresser, W.J.Choyke and J.T.Yates, Jr., Adsorption and decomposition of acetylene on Si(100)-(2x1), Journal of the American Chemical Society 114 6754 (1992) (102 independent citations as of Feb. 2005). 1992 - Publication
M.Burkhart, B.Story, R.M.Wallace and B.Patrick , The effects of prolonged exposure to aqueous ammonium hydroxide on polyvinylidene fluoride pipe, Microcontamination , October (1992) 27. 1992 - Publication
P.J.Chen, M.L.Colaianni, R.M.Wallace and J.T.Yates, Jr., Dissociative adsorption of PH3 on Si(111)-(7x7): a high resolution electron energy loss spectroscopy study, Surface Science 244 177 (1991). 1991 - Publication
R.M.Wallace, P.A.Taylor, M.J.Dresser, W.J.Choyke and J.T.Yates, Jr., Background effects in electron stimulated desorption ion angular distribution (ESDIAD) measurements on Si(111)-(7x7), Review of Scientific Instruments 62 720 (1991). 1991 - Publication
R.M.Wallace, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., An ESDIAD study of chemisorbed hydrogen on clean and H-exposed Si(111)-(7x7), Surface Science 239 1 (1990). 1990 - Publication
R.M.Wallace, C.C.Cheng, P.A.Taylor, W.J.Choyke and J.T.Yates, Jr., Ni impurity effects on hydrogen surface chemistry and etching of Si(111), Applied Surface Science 45 201 (1990). 1990 - Publication
P.A.Taylor, R.M.Wallace, W.J.Choyke and J.T.Yates, Jr., Adsorption and decomposition of PH3 on Si(111)-(7x7), Surface Science 238 1 (1990). 1990 - Publication
A University of Texas at Dallas team will play a key role in a new $15 million research project designed to enable manufacturing at an almost unimaginably small scale: one atom at a time. “This breakthrough technology will make it possible to manufacture devices with atomic precision by exploiting our established ability to remove individual hydrogen atoms from a silicon surface using a scanning tunneling microscope,” said Robert Wallace, a professor of materials science and engineering in the Erik Jonsson School of Engineering and Computer Science at UT Dallas and a co-principal investigator in the project. Funded for $1.8 million over the next four-and-a-half years, the UT Dallas team also includes Yves Chabal, head of the Jonsson School’s new Materials Science and Engineering Department and holder of the Texas Instruments Distinguished University Chair in Nanoelectronics, and K.J. Cho, an associate professor of materials science and engineering and physics.
Virtually every new semiconductor chip that’s manufactured in coming years will feature insulator technology co-invented by Robert Wallace, professor of electrical engineering and physics at the University of Texas at Dallas. In recognition of his work, Wallace has been named a fellow of AVS – a professional society for researchers working on the science of materials, interfaces and processing. The group, formerly known as the American Vacuum Society, elected him during the organization’s annual meeting last week. Honorees have made at least 10 years of sustained and outstanding technical contributions to materials science and related fields.
UT Dallas Professor Robert Wallace has been named an IEEE Fellow, one of the highest honors bestowed by the Institute of Electrical and Electronics Engineers. An authority on semiconductor materials and integration, Dr. Wallace is co-inventor of a widely used insulator technology that has played a significant part in enabling today’s semiconductor manufacturers to produce chips that are smaller and more energy-efficient than ever before. The technology, called “high-k dielectrics,” is now employed in the industry’s most advanced microprocessors. A professor of materials science and engineering and electrical engineering at the Erik Jonsson School of Engineering and Computer Science at UT Dallas, he is the 11th member of the school’s faculty to be named an IEEE fellow. It’s a designation that’s granted each year to a select group of IEEE members for accomplishments that “have contributed importantly to the advancement or application of engineering, science and technology,” according to IEEE.
A recent article
in the journal Science
details how researchers from the Erik Jonsson School of Engineering and Computer Science
devised a simple process that dramatically increases light generation from certain atomic-sized materials.
The findings could have a broad impact in the advancement of LED displays, high efficiency solar cells, photo detectors, and nano-electronic circuits and devices.