B.R.Chalamala, R.M.Wallace and B.E.Gnade, Effect of Oxygen on the Electron Emission Characteristics of Active Mo Field Emission Cathode Arrays, Journal of Vacuum Science and Technology B16 2859 (1998). 1998 - Publication
A Seabaugh, R.Lake, B. Brar, R.M.Wallace and G.Wilk, Silicon-based Quantum MOS Technology, Government Microcircuit Applications Conference Proceedings (1998). 1998 - Publication
B.R.Chalamala, R.M.Wallace and B.E.Gnade, Poisoning of Spindt-type Molybdenum Field Emitter Arrays by CO2, Journal of Vacuum Science and Technology B16 2866 (1998). 1998 - Publication
B.Kaczer, H.-J.Ihm, J.P.Pelz and R.M.Wallace, Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy, Applied Physics Letters 73 1871 (1998). 1998 - Publication
W.L.Warren, D.M.Fleetwood, J.R.Schwank, M.R.Shaneyfelt, B.L.Draper, P.S.Winokur, M.G.Knoll, K.Vanheusden, R.A.B.Devine, L.B.Archer, G.A.Brown and R.M.Wallace, Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films, Applied Physics Letters 73 674 (1998). 1998 - Publication
P. J. Chen, R. M. Wallace, and S. A. Henck, "Thermal properties of perfluorinated n-alkanoic acids self-assembled on native aluminum oxide surfaces", Journal of Vacuum Science and Technology A 16 700 (1998). 1998 - Publication
H. C. Mogul, L. Cong, R. M. Wallace, P. J. Chen, T. A. Rost, and K. Harvey, "Electrical and physical characterization of deuterium sinter on submicron devices", Applied Physics Letters 72 1721 (1998). 1998 - Publication
P.J.Chen and R.M.Wallace, Examination of Deuterium Transport through Device Structures, Applied Physics Letters 73 3441 (1998). 1998 - Publication
S.Tang, R.M.Wallace, A.Seabaugh and D.King-Smith, Evaluating the minimum thickness of gate oxide on silicon using first-principles method, Applied Surface Science 135 137 (1998). 1998 - Publication
Z.H.Lu, J.P.McCaffery, B.Brar, G.D.Wilk, R.M.Wallace, L.C.Feldman and S.P.Tay, SiO2 film thickness metrology by x-ray photoelectron spectroscopy, Applied Physics Letters 71 2764 (1997). 1997 - Publication
University of Texas at Dallas [2011–Present]
University of Texas at Dallas [2010–2011]
University of Texas at Dallas [2006–Present]
University of Texas at Dallas [2004–2010]
University of Texas at Dalla [2003–Present]
University of North Texas [1999–2003]
University of North Texas [1999–2003]
Texas Instruments, Inc. [1997–1999]
Sr. Member Technical Staff
Texas Instruments, Inc. [1996–1997]
Member, Technical Staff
Texas Instruments, Inc. [1990–1996]
A University of Texas at Dallas team will play a key role in a new $15 million research project designed to enable manufacturing at an almost unimaginably small scale: one atom at a time. “This breakthrough technology will make it possible to manufacture devices with atomic precision by exploiting our established ability to remove individual hydrogen atoms from a silicon surface using a scanning tunneling microscope,” said Robert Wallace, a professor of materials science and engineering in the Erik Jonsson School of Engineering and Computer Science at UT Dallas and a co-principal investigator in the project. Funded for $1.8 million over the next four-and-a-half years, the UT Dallas team also includes Yves Chabal, head of the Jonsson School’s new Materials Science and Engineering Department and holder of the Texas Instruments Distinguished University Chair in Nanoelectronics, and K.J. Cho, an associate professor of materials science and engineering and physics.
Virtually every new semiconductor chip that’s manufactured in coming years will feature insulator technology co-invented by Robert Wallace, professor of electrical engineering and physics at the University of Texas at Dallas. In recognition of his work, Wallace has been named a fellow of AVS – a professional society for researchers working on the science of materials, interfaces and processing. The group, formerly known as the American Vacuum Society, elected him during the organization’s annual meeting last week. Honorees have made at least 10 years of sustained and outstanding technical contributions to materials science and related fields.
UT Dallas Professor Robert Wallace has been named an IEEE Fellow, one of the highest honors bestowed by the Institute of Electrical and Electronics Engineers. An authority on semiconductor materials and integration, Dr. Wallace is co-inventor of a widely used insulator technology that has played a significant part in enabling today’s semiconductor manufacturers to produce chips that are smaller and more energy-efficient than ever before. The technology, called “high-k dielectrics,” is now employed in the industry’s most advanced microprocessors. A professor of materials science and engineering and electrical engineering at the Erik Jonsson School of Engineering and Computer Science at UT Dallas, he is the 11th member of the school’s faculty to be named an IEEE fellow. It’s a designation that’s granted each year to a select group of IEEE members for accomplishments that “have contributed importantly to the advancement or application of engineering, science and technology,” according to IEEE.
A recent article
in the journal Science
details how researchers from the Erik Jonsson School of Engineering and Computer Science
devised a simple process that dramatically increases light generation from certain atomic-sized materials.
The findings could have a broad impact in the advancement of LED displays, high efficiency solar cells, photo detectors, and nano-electronic circuits and devices.