M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M.R.Visokay, M.Douglas, and L. Colombo, Hafnium interdiffusion studies from hafnium silicate into Silicon, Applied Physics Letters, 79 4192 (2001). 2001 - Publication
M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M.R.Visokay, M.Douglas, M.J.Bevan and L. Colombo, Thermally induced Zr incorporation into Si from zirconium silicate thin films, Applied Physics Letters, 79 2958 (2001). 2001 - Publication
R.M.Wallace and G.D.Wilk, Identifying the Most Promising High-k Gate Dielectrics, Semiconductor International 24(7) July (2001), pp. 227-236. 2001 - Publication
R.M.Wallace and G.D.Wilk, Exploring the Limits of Gate Dielectric Scaling, Semiconductor International 24(6) June (2001), pp. 543-550. 2001 - Publication
G.D.Wilk, R.M.Wallace, and J.M.Anthony, High-k Gate Dielectrics: Current Status and Materials Properties Considerations, Journal of Applied Physics 89 5243 (2001) (invited review >1300 citations as of Oct. 2006). 2001 - Publication
Q.Zhang, S. Tang and R.M.Wallace, Proton trapping and diffusion in SiO2 thin films: a first-principles study, Applied Surface Science 172 41 (2001). 2001 - Publication
2. G.D.Wilk, R.M.Wallace, and J.M.Anthony, Hafnium and Zirconium Silicates for Advanced Gate Dielectrics, Journal of Applied Physics 87 484 (2000) (>190 citations as of Oct. 2006). 2000 - Publication
G.D.Wilk and R.M.Wallace, Stable Zirconium Silicate Gate Dielectrics Deposited Directly on Si, Applied Physics Letters 76 112 (2000) (>440 citations as of Oct. 2006). 2000 - Publication
G.D.Wilk and R.M.Wallace, Silicate Gate Dielectrics for scaled CMOS, The Physics and Chemistry of SiO2 and Si-SiO2 interface 4, H.Z.Massoud, I.J.R.Baumvol, M.Hirose and E.H.Poindexter, Editors, Proc. Vol. 2000-2, 464, The Electrochemical Society, Pennington, NJ (2000). 2000 - Publication
P.E. Nicollian, M. Rodder, D.T.Grider, P. Chen, R.M.Wallace and S.V.Hattangady, Low voltage stress-induced-leakage-current in ultrathin gate oxides, IEEE International Reliability Physics Symposium Proceedings (1999) 400. 1999 - Publication
University of Texas at Dallas [2011–Present]
University of Texas at Dallas [2010–2011]
University of Texas at Dallas [2006–Present]
University of Texas at Dallas [2004–2010]
University of Texas at Dalla [2003–Present]
University of North Texas [1999–2003]
University of North Texas [1999–2003]
Texas Instruments, Inc. [1997–1999]
Sr. Member Technical Staff
Texas Instruments, Inc. [1996–1997]
Member, Technical Staff
Texas Instruments, Inc. [1990–1996]
A University of Texas at Dallas team will play a key role in a new $15 million research project designed to enable manufacturing at an almost unimaginably small scale: one atom at a time. “This breakthrough technology will make it possible to manufacture devices with atomic precision by exploiting our established ability to remove individual hydrogen atoms from a silicon surface using a scanning tunneling microscope,” said Robert Wallace, a professor of materials science and engineering in the Erik Jonsson School of Engineering and Computer Science at UT Dallas and a co-principal investigator in the project. Funded for $1.8 million over the next four-and-a-half years, the UT Dallas team also includes Yves Chabal, head of the Jonsson School’s new Materials Science and Engineering Department and holder of the Texas Instruments Distinguished University Chair in Nanoelectronics, and K.J. Cho, an associate professor of materials science and engineering and physics.
Virtually every new semiconductor chip that’s manufactured in coming years will feature insulator technology co-invented by Robert Wallace, professor of electrical engineering and physics at the University of Texas at Dallas. In recognition of his work, Wallace has been named a fellow of AVS – a professional society for researchers working on the science of materials, interfaces and processing. The group, formerly known as the American Vacuum Society, elected him during the organization’s annual meeting last week. Honorees have made at least 10 years of sustained and outstanding technical contributions to materials science and related fields.
UT Dallas Professor Robert Wallace has been named an IEEE Fellow, one of the highest honors bestowed by the Institute of Electrical and Electronics Engineers. An authority on semiconductor materials and integration, Dr. Wallace is co-inventor of a widely used insulator technology that has played a significant part in enabling today’s semiconductor manufacturers to produce chips that are smaller and more energy-efficient than ever before. The technology, called “high-k dielectrics,” is now employed in the industry’s most advanced microprocessors. A professor of materials science and engineering and electrical engineering at the Erik Jonsson School of Engineering and Computer Science at UT Dallas, he is the 11th member of the school’s faculty to be named an IEEE fellow. It’s a designation that’s granted each year to a select group of IEEE members for accomplishments that “have contributed importantly to the advancement or application of engineering, science and technology,” according to IEEE.
A recent article
in the journal Science
details how researchers from the Erik Jonsson School of Engineering and Computer Science
devised a simple process that dramatically increases light generation from certain atomic-sized materials.
The findings could have a broad impact in the advancement of LED displays, high efficiency solar cells, photo detectors, and nano-electronic circuits and devices.