P.Zhao, J.Kim, M.J.Kim, B.E.Gnade and R.M.Wallace, Thermally Stable MoxSiyNz as a Metal gate Electrode for Advanced CMOS Devices, in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 152. 2005 - Publication
M.A. Quevedo-Lopez, M.R. Visokay, J.J. Chambers, M.J. Bevan, A. Lifatou, L. Colombo, M.J. Kim, B.E. Gnade, and R.M. Wallace, Dopant Penetration Studies through Hf Silicate, Journal of Applied Physics 97 043508-1-15 (2005). 2005 - Publication
P. Sivasubramani, M. J. Kim, B. E. Gnade, R. M. Wallace, L. F. Edge, D. G. Schlom, H. S. Craft and J.-P. Maria, Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001), Applied Physics Letters 86 201901(2005). 2005 - Publication
P. Punchaipetch, Gaurang Pant, M. Quevedo-Lopez, C. Yao, M. El-Bouanani, M.J.Kim, R.M. Wallace and B.E. Gnade, Low temperature deposition of hafnium silicate gate dielectrics, IEEE Journal on Selected Topics in Quantum Electronics 10, 89 (2004) (Invited Paper). 2004 - Publication
Y. Zhang, L. Huang, T.N. Arunagiri, O. Ojeda, S. Flores, O. Chyan, and R.M. Wallace, Underpotential deposition of copper on electrochemically prepared conductive ruthenium oxide surface, Electrochemical and Solid-State Letters, 7(9) p. C107-10 (2004). 2004 - Publication
R.M.Wallace, Challenges for the characterization and integration of high-k dielectrics, Applied Surface Science 231-232, 543 (2004). 2004 - Publication
S. Addepalli, P. Sivasubramani, M. J. Kim, B. E. Gnade, and R. M. Wallace, The electrical properties and stability of the hafnium silicate-Si0.8Ge0.2(100) interface, Journal of Electronic Materials 33 1016 (2004). 2004 - Publication
S. Addepalli, P. Sivasubramani, M. El-Bouanani, M. J. Kim, B. E. Gnade, and R. M. Wallace, Deposition of Hf-silicate gate dielectric on SixGe1-x(100): Detection of interfacial layer growth, Journal of Vacuum Science and Technology A22, 616 (2004). 2004 - Publication
G. Pant, P. Punchaipetch, M. J. Kim, R. M. Wallace and B. E. Gnade, Low Temperature UV/ozone oxidation formation of HfSiON gate dielectric, Thin Solid Films 460, 242 (2004). 2004 - Publication
J. Wu, P. Punchaipetch, R.M. Wallace, and J.L. Coffer Fabrication and optical properties of erbium-doped germanium nanowires ,Advanced Materials 16 (16) 1444 (2004) 2004 - Publication
University of Texas at Dallas [2011–Present]
University of Texas at Dallas [2010–2011]
University of Texas at Dallas [2006–Present]
University of Texas at Dallas [2004–2010]
University of Texas at Dalla [2003–Present]
University of North Texas [1999–2003]
University of North Texas [1999–2003]
Texas Instruments, Inc. [1997–1999]
Sr. Member Technical Staff
Texas Instruments, Inc. [1996–1997]
Member, Technical Staff
Texas Instruments, Inc. [1990–1996]
A University of Texas at Dallas team will play a key role in a new $15 million research project designed to enable manufacturing at an almost unimaginably small scale: one atom at a time. “This breakthrough technology will make it possible to manufacture devices with atomic precision by exploiting our established ability to remove individual hydrogen atoms from a silicon surface using a scanning tunneling microscope,” said Robert Wallace, a professor of materials science and engineering in the Erik Jonsson School of Engineering and Computer Science at UT Dallas and a co-principal investigator in the project. Funded for $1.8 million over the next four-and-a-half years, the UT Dallas team also includes Yves Chabal, head of the Jonsson School’s new Materials Science and Engineering Department and holder of the Texas Instruments Distinguished University Chair in Nanoelectronics, and K.J. Cho, an associate professor of materials science and engineering and physics.
Virtually every new semiconductor chip that’s manufactured in coming years will feature insulator technology co-invented by Robert Wallace, professor of electrical engineering and physics at the University of Texas at Dallas. In recognition of his work, Wallace has been named a fellow of AVS – a professional society for researchers working on the science of materials, interfaces and processing. The group, formerly known as the American Vacuum Society, elected him during the organization’s annual meeting last week. Honorees have made at least 10 years of sustained and outstanding technical contributions to materials science and related fields.
UT Dallas Professor Robert Wallace has been named an IEEE Fellow, one of the highest honors bestowed by the Institute of Electrical and Electronics Engineers. An authority on semiconductor materials and integration, Dr. Wallace is co-inventor of a widely used insulator technology that has played a significant part in enabling today’s semiconductor manufacturers to produce chips that are smaller and more energy-efficient than ever before. The technology, called “high-k dielectrics,” is now employed in the industry’s most advanced microprocessors. A professor of materials science and engineering and electrical engineering at the Erik Jonsson School of Engineering and Computer Science at UT Dallas, he is the 11th member of the school’s faculty to be named an IEEE fellow. It’s a designation that’s granted each year to a select group of IEEE members for accomplishments that “have contributed importantly to the advancement or application of engineering, science and technology,” according to IEEE.
A recent article
in the journal Science
details how researchers from the Erik Jonsson School of Engineering and Computer Science
devised a simple process that dramatically increases light generation from certain atomic-sized materials.
The findings could have a broad impact in the advancement of LED displays, high efficiency solar cells, photo detectors, and nano-electronic circuits and devices.