Robert Wallace

Erik Jonsson Distinguished Chair
Professor - Materials Science & Engineering
Tags: Physics Electrical Engineering Mechanical Engineering Materials Science and Engineering Computer Engineering

Professional Preparation

Ph.D. - Physics
University of Pittsburgh - 1988
M.S. - Physics
University of Pittsburgh - 1984
B.S. - Physics, Applied Mathematics
University of Pittsburgh - 1982

Research Areas

Research Interests

Surface, Interface, materials and integration issues for advanced devices including:

  • Gate dielectrics
  • Gate electrodes
  • Contacts
  • Nanoelectronics

Publications

L. Colombo, R. M. Wallace and R.S. Ruoff, "Graphene Growth and Device Integration," (Invited) Proceedings of the IEEE, 101, 1536 (2013). http://dx.doi.org/10.1109/JPROC.2013.2260114 2013 - Publication
D.M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, M. Yakimov, V.Tokranov, and S. Oktyabrsky, “An investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100),” Journal of Vacuum Science and Technology A, 31, 060602(2013) 2013 - Publication
C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho “Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors,” Applied Physics Letters, 103, 053513 (2013) 2013 - Publication
H. Dong, W. Cabrera, R. V. Galatage, Santosh KC, B. Brennan, X. Qin, S. McDonnell, D. Zhernokletov, C. L. Hinkle, K. Cho, Y. J. Chabal, and R. M. Wallace “Indium diffusion through high-k dielectrics in high-k/InP stacks,” Applied Physics Letters, 103, 061601 (2013) 2013 - Publication
B. Brennan, R. V. Galatage, K. Thomas, E. Pelucchi, P. K. Hurley, J. Kim, C. L. Hinkle,   E. M. Vogel, and R. M. Wallace,  “Chemical and electrical characterization of the HfO2/InAlAs interface,”  Journal of Applied Physics, 114, 104103 (2013) 2013 - Publication
B.Rajamohanan, D.Mohata, D. Zhernokletov, B. Brennan, R. M. Wallace, R. Engel-Herbert, and S. Datta, “Low-Temperature Atomic-Layer-Deposited High- Dielectric for p-channel In0.7Ga0.3As/GaAs0.35Sb0.65 Hetero-junction Tunneling Field-Effect Transistor,”   Applied Physics Express, 6, 101201 (2013). 2013 - Publication
H. Dong, B. Brennan, X. Qin, D. M. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, “In situ study of atomic layer deposition Al2O3 on GaP (100),”  Applied Physics Letters, 103, 121604 (2013) 2013 - Publication
S. J. McDonnell, R. C. Longo, O. Seitz, J. B. Ballard, G. Mordi, D. D. Dick, J. H. G. Owen, J. N. Randall, J. Kim, Y. J. Chabal, K. Cho, and R. M. Wallace, “Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence on Surface Termination,”  Journal of Physical Chemistry C, 117, 20250 (2013) 2013 - Publication
P.K. Hurley, E. O’Connor, R. D. Long, P. C. McIntyre, B. Brennan, R. M. Wallace, V. Djara, S. Monaghan, B. Sheehan, J. Lin, I. M. Povey, M. E. Pemble and K. Cherkaoui, “The characterisation and passivation of fixed oxide charges and interface states in the Al2O3/InGaAs MOS system,” IEEE Trans. on Materials and Device Reliability, 13, 429 (2013) 2013 - Publication
H. Dong, Santosh KC, X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle,  J. Kim, K. Cho, and R. M. Wallace,   “In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP,”  Journal of Applied Physics, 114 , 154105 (2013). 2013 - Publication

Appointments

Distinguisged Chair
University of Texas at Dallas [2011–Present]
Distinguished Professor
University of Texas at Dallas [2010–2011]
Professor
University of Texas at Dallas [2006–Present]
Director
University of Texas at Dallas [2004–2010]
Professor
University of Texas at Dalla [2003–Present]
Director
University of North Texas [1999–2003]
Professor
University of North Texas [1999–2003]
Manager
Texas Instruments, Inc. [1997–1999]
Sr. Member Technical Staff
Texas Instruments, Inc. [1996–1997]
Member, Technical Staff
Texas Instruments, Inc. [1990–1996]

Additional Information

Professional Activity

Membership in Professional Organizations 

  • American Chemical Society
  • Materials Research Society 
  • American Vacuum Society (Fellow)
  • Institute of Electronic and Electrical Engineers (Fellow)
  • Electrochemical Society 
  • ASTM Committee E-42 on Surface Analysis 
Special Awards and Distinctions
  • (2014) Erik Jonsson School Distinguished Senior Research Contributions Award
  • (2011) IBM Faculty Award
  • (2009) Named Fellow of the IEEE “for contributions to high-k gate dielectric materials for integrated circuits” 
  • (2007) Named Fellow of the AVS “for significant contributions to high-k dielectric materials research enabling the scaling of integrated circuit technology” 
  • (2007) Best Paper Award, "Oxygen Species in HfO2 Films: An in Situ X-Ray Photoelectron Spectroscopy Study" by C. Driemeier, R. M. Wallace, and I.J. R. Baumvol, High Dielectric Constant Materials and Gate Stack Symposium, 212th Electrochemical Society Meeting, Washington, D.C. 
  • Co-author of paper entitled “High-k Gate Dielectrics: Current Status and Materials Properties Considerations” (in the Journal of Applied Physics 89 (2001) 5243. (>3100 citations as of December 2010). 
  • (2006) Selected as a high impact Applied Physics Review paper for the 75th Anniversary of the American Institute for Physics: http://jap.aip.org/09_10_09_75th_sample_articles
  • (2005) Recognized by the Semiconductor Research Corporation as the top ranked “influential research paper” for the semiconductor industry sponsored by the SRC based upon peer citations
  • (2003) Semiconductor Research Corporation Inventor Recognition Award 
  • (2002) Elected to Senior Member of the Institute for Electrical and Electronics Engineers 
  • (1998) ASTM E-42 Committee on Surface Analysis Service Award 
  • (1996) Sr. Member, Technical Staff – Texas Instruments (limited to top 5% of technical staff) 
  • (1988) Pittsburgh Crystal Growers Society Outstanding Researcher Award 
  • (1982) University of Pittsburgh David Halliday Prize for Outstanding Undergraduate Research in Physics
Teaching Experience
Courses Developed/Taught 
  • Introduction to Nanoscience and Technology (NANO 3301) 
  • Characterization and Nanotech Instrumentation (NANO 3302) 
  • Introduction to Materials Science (MSEN 5100) 
  • Electronic, Optical and Magnetic Materials (EE/MSEN 6324) 
  • Fundamentals of Surface and Thin Film Analysis (MSEN 5360) 
  • Quantum Mechanics for Materials Scientists (MSEN 6319) 
  • Diffraction Science (MSEN 6362) 
  • Silicon Surface Chemistry and Physics (at Texas Instruments)

News Articles

Researchers Drafting Plans for Tiny Assembly Lines
A University of Texas at Dallas team will play a key role in a new $15 million research project designed to enable manufacturing at an almost unimaginably small scale: one atom at a time. “This breakthrough technology will make it possible to manufacture devices with atomic precision by exploiting our established ability to remove individual hydrogen atoms from a silicon surface using a scanning tunneling microscope,” said Robert Wallace, a professor of materials science and engineering in the Erik Jonsson School of Engineering and Computer Science at UT Dallas and a co-principal investigator in the project. Funded for $1.8 million over the next four-and-a-half years, the UT Dallas team also includes Yves Chabal, head of the Jonsson School’s new Materials Science and Engineering Department and holder of the Texas Instruments Distinguished University Chair in Nanoelectronics, and K.J. Cho, an associate professor of materials science and engineering and physics.
Prof. Robert Wallace, Insulator Technology Pioneer, Honored for Sustained Excellence
Virtually every new semiconductor chip that’s manufactured in coming years will feature insulator technology co-invented by Robert Wallace, professor of electrical engineering and physics at the University of Texas at Dallas. In recognition of his work, Wallace has been named a fellow of AVS – a professional society for researchers working on the science of materials, interfaces and processing. The group, formerly known as the American Vacuum Society, elected him during the organization’s annual meeting last week. Honorees have made at least 10 years of sustained and outstanding technical contributions to materials science and related fields.
Electronics Engineers Honor UT Dallas Colleague
UT Dallas Professor Robert Wallace has been named an IEEE Fellow, one of the highest honors bestowed by the Institute of Electrical and Electronics Engineers. An authority on semiconductor materials and integration, Dr. Wallace is co-inventor of a widely used insulator technology that has played a significant part in enabling today’s semiconductor manufacturers to produce chips that are smaller and more energy-efficient than ever before. The technology, called “high-k dielectrics,” is now employed in the industry’s most advanced microprocessors. A professor of materials science and engineering and electrical engineering at the Erik Jonsson School of Engineering and Computer Science at UT Dallas, he is the 11th member of the school’s faculty to be named an IEEE fellow. It’s a designation that’s granted each year to a select group of IEEE members for accomplishments that “have contributed importantly to the advancement or application of engineering, science and technology,” according to IEEE.
Scientists Dramatically Increase Light from Atomic-Sized Materials
A recent article in the journal Science details how researchers from the Erik Jonsson School of Engineering and Computer Science devised a simple process that dramatically increases light generation from certain atomic-sized materials.

The findings could have a broad impact in the advancement of LED displays, high efficiency solar cells, photo detectors, and nano-electronic circuits and devices.

Activities

Editorships

Applied Surface Science - Editor

Journal of Materials Research: Materials in Electronics - Editorial Board