“Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si,” B. Zhang, T. Zheng, Q. Wang, Y. Zhu, H.A. Alshareef, M.J, Kim and B.E. Gnade, J. Alloys Comp. 699, 1134-1139 (2017) 2017 - Publication
“MoS2 transistors with 1-nanometer gate length,” S. Desai, S.R. Madhvapathy, A.B. Sachid, J.P. Llinas, Q. Wang, G.H. Ahn, G. Pitner, M.J. Kim, J. Bokor, C. Hu, H.-S. Wong and A. Javey, Science 354, 99-102 (2016). – featured by numerous media outlets 2016 - Publication
“Bottom-Up Synthesis of Vertically Oriented Two-Dimensional Materials,” R.A. Vila, K. Momeni, Q. Wang, B.M. Bersch, N. Lu, M.J. Kim, L.Q. Chen and J.A. Robinson, 2D Mater. 3, 041003 (2016) 2016 - Publication
“Optimized thermal properties in diamond particles reinforced copper-titanium matrix composites produced by gas pressure infiltration,” J. Li, H. Zhang, L. Wang, Z. Che, Y. Zhang, J. Wang, M.J. Kim and X. Wang, Composites A 91, 189-194 (2016) 2016 - Publication
“Peroxidase-like properties of ruthenium nanoframes,” H. Ye, J. Mohar, Q. Wang, M. Catalano, M.J. Kim and X. Xia, Sci. Bulletin. 61, 1739-1745 (2016) – featured as a cover paper. 2016 - Publication
“Atomic scale study of model CdTe grain boundaries,” T. Paulauskas, F. G. Sen, C. Sun, E. Barnard, M. Chan, M.J. Kim, S. Sivalingham, R. Klie, 43rd IEEE Photovoltaic Specialists Conference (PVSC) 43, 3664-3666 (2016) 2016 - Publication
“First principles modeling of grain boundaries in CdTe,” F.G. Sen, C. Buurma, T. Paulauskas, C. Sun, M.J. Kim, S. Sivananthan, R.F. Klie and K.Y. Chan, IEEE 43rd Photovoltaic Specialists Conference (PVSC) 43, 3374-3377 (2016) 2016 - Publication
“Tailoring renal clearance and tumor targeting of ultasmall metal nanoparticles with particle density”, S. Tang, C. Peng, J. Xu, B. Du, Q. Wang, R. Vinlunan, M. Yu, M.J. Kim and J. Zheng, Angewandte Chemie 55, 16039-16043(2016) 2016 - Publication
“Characterization and metrology for graphene materials, structures, and devices,” L. Colombo, A. Diebold, C. Casiraghi, M.J. Kim, R.M. Wallace, A. Venugopal, in “Metrology and Diagnostic Techniques for Nanoelectronics,” Eds. Z. Ma and D. Seiler, Pan Stanford (2016) 2016 - Publication
“Nucleation and growth mechanisms of interfacial Al4C3 in Al/diamond composites formed by gas pressure infiltration,” Z. Che, Y Zhang, J. Li, H. Zhang, X. Wang, C. Sun, J. Wang and M.J. Kim, J. Alloy. Compd. 657, 81-89 (2016) 2016 - Publication
Louis Beecherl, Jr., Distinguished Professor
Arts and Humanities
Microscopy Society of America [2012–Present]
Industry University Cooperative Research Center [2009–Present]
UTSW Medical Center [2007–Present]
Simmons Comprehensive Cancer Center
University of Texas at Dallas [2005–Present]
University of Texas at Dallas [2004–Present]
University of Texas at Dallas [2003–2005]
University of North Texas [2002–2004]
Facility for Electron Microscopy
Manufacturing on the nanoscale has come a long way since Feynman’s visions of nanotechnology more than 50 years ago. Since then, studies have demonstrated how low-dimensional structures, such as nanowires and quantum dots, have unique properties that can improve the performance of a variety of devices. In the latest study in this area, researchers have fabricated transistors made with exceptionally thin silicon nanowires that exhibit high performance due to quantum confinement effects in the nanowires.
The team of researchers, Krutarth Trivedi, Hyungsang Yuk, Herman Carlo Floresca, Moon J. Kim, and Walter Hu, from the University of Texas at Dallas, has published their study in a recent issue of Nano Letters
UT Dallas is the new home of a consortium dedicated to making technological advances in the silicon wafer that is the foundation for most of the semiconductor chips that surround us.
“This is a great opportunity to further enhance our faculty members’ and graduate students’ impact on the future development of semiconductor technology,” said Moon Kim, director of the center and a professor of materials science and engineering. The field is a fast-growing area at the University that now includes 14 faculty members, dozens of graduate students and several million dollars in annual research funding.
Crystallographic defects or irregularities (known as dislocations) are often found within crystalline materials. Two main types of dislocation exist: edge and screw type. However, dislocations found in real materials tend to be a mix of these two types, resulting in a complex atomic arrangement not found in bulk crystals. The study of these dislocations in semiconductors is probably as old as the science of semiconductors itself, and the technological importance of dislocations can hardly be overstated.
The field of quantum mechanics deals with materials at atomic dimensions, and big discoveries often happen at a very small scale. Researchers in the Erik Jonsson School of Engineering and Computer Science
, in collaboration with an international team of engineers and scientists, have uncovered a phenomenon that could have major implications for the development of nano-electronic circuits and devices.
In a recent article published in Nature Communications
, the researchers describe for the first time how grown and stacked, atomically thin materials can exhibit a unique transport effect, called negative differential resistance, or NDR, at room temperature.
In the quest for faster and more powerful computers and consumer electronics, big advances come in small packages.
The high-performance, silicon-based transistors that control today’s electronic devices have been getting smaller and smaller, allowing those devices to perform faster while consuming less power.
But even silicon has its limits, so researchers at The University of Texas at Dallas and elsewhere are looking for better-performing alternatives.