Ph.D. - Materials Science and Engineering
University of Texas at Austin - 1994

M.S. - Metallurgical Engineering
Seoul National University - 1988

B.S. - Metallurgical Engineering
Seoul National University - 1986

J. Kim, S. Won, D. Jung, H. Yang, H. Shin, J. Lee, M. Sung, Consecutive Selective Deposition Using Atomic Layer Deposition and Self Assembled Monolayers, (In Preparation) forthcoming - Publication

T. J. Park, P. Sivasubramani, B. E. Coss, B. Lee, R. M. Wallace, J. Kim, M. Rousseaus, X. Liu, H. Li, J.-S. Lehn, D. Hong, D. Shenai, Reduction of residual C and N-related impurities by Al2O3 insertion in atomic-layer-deposited La2O3 thin films, Electrochem. Solid.Lett. 14 (4) DOI:10.1149/1.3545965 (In print) forthcoming - Publication

K.J. Chung, et al., Micro. Electron. Eng. (Submitted) forthcoming - Publication

B. Lee, A. Hande, H. Kim, R. M. Wallace, J. Kim, X. Liu, M. Rousseau, J. Yi,. H. Li, D. Shenai, and J. Suydam, LaHfO nano-laminates for high-k gate dielectric applications, Micro. Electron. Eng. (Submitted) forthcoming - Publication

K.J. Choi, B. Lee, S. J. McDonnell, R.M. Wallace, J. Kim, Step by step in-situ X-ray photoelectron spectroscopy investigation on ALD Al2O3 films using TMA and water on Si substrate, (In Preparation) forthcoming - Publication

D. Cha, B. Lee, M. J. Kim, J. Kim, Fabrication and characteristic of stand-alone single TiO2 nanotube devices, Adv. Function. Mater. (In Prep.) forthcoming - Publication

C. Bae, Y. Yoon, W. S. Yoon, J. Moon, J. Kim, H. Shin, Hierarchical titania nanotubes with selfbranched crystalline nanorods, ACS Appl. Mater. Interface, 2, pp. 1581-1587 (2010) 2010 - Publication

A. P. Kirk, M. Milojevic, J. Kim, R. M. Wallace, An in-situ examination of atomic layer deposited alumina/InAs (100) interfaces, Appl. Phys. Lett., 96, 202905 (2010) 2010 - Publication

Professor
U. of Texas at Dallas [2013–Present]

Associate Professor
U. of Texas at Dallas [2008–2013]

Associate Professor
Univ. of Texas at Dallas [2005–2013]

Director
Kookmin U [2004–2005]
Research Institute of Nano Technology and Science

Visiting Researcher
Univ. of Texas [2004–2004]

Associate Professor
Kookmin U [2003–2005]
Prog. In Nano-Sci & Tech.

Visiting Researcher
U of North Texas [2003–2003]

Associate Professor
Kookmin U [2002–2005]

Assistant Professor
Kookmin U [1998–2002]

Fulltime Lecturer
Kookmin U [1996–1998]

Fabrication and characterization of single stand-alone TiO2 nanotube devices

2008–2008 D. Cha, K. Lee, B. Lee, J. Wang, M. Kim, H. Shin, J. Lee, J. Kim, Fabrication and characterization of single stand-alone TiO2 nanotube devices, 2008 TMS Annual Meeting and Exhibition, New Orleans/LS, Mar. 9-13 (2008)

GaAs MOS frequency dispersion reduction by surface oxide removal and passivation

2007–2007 C. Hinkle, A. Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. Aguirre-Tostado, K. Choi, J. Kim, R. Wallace, GaAs MOS frequency dispersion reduction by surface oxide removal and passivation, IEEE-SISC (2007)

XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs

2007–2007 F. Aguirre-Tostado, M. Milojevic, S. McDonnell, K. Choi, J. Kim, R. Wallace, T. Yang, Y. Xuan, D. Zemlynanov, T. Shen, Y. Wu, J. Woodall, P. Ye, XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs, IEEE-SISC (2007)

Phase transformation of sputtered TaxNy thin films as a function of nitrogen and doping element concentrations

2007–2007 B. Coss, F. Aguirre-Tostado, R. Wallace and J. Kim, Phase transformation of sputtered TaxNy thin films as a function of nitrogen and doping element concentrations, 2007 Fall MRS, Boston, Nov. (2007)

Study of interface electromigration mechanism in Cu/barrier interconnects

2007–2007 J. Kim, N. Michael, C. Kim, Y. Park, R. Augur, J. Kim, Study of interface electromigration mechanism in Cu/barrier interconnects, The Sixth Pacific Rim International Conference on Advanced Materials and Processing, Jeju/Korea, Nov. 5-9, 2007

Honors and awards

• Selected Outstanding Research by Korean Ministry Of Science and Technology, (2004) Press Released
• Best Paper Award at 2004 Korean Metals and Materials Society (2004)
• Best Poster Award at 2003 Korean Materials Research Society Meeting (2003)
• Named in "Who's Who in Science and Engineering (2000)"
• Named in "Who's Who in the World (1999)"
• Korean Government Oversea Scholarship (1990 - 1993)

Grants Received

• J. Kim (PI), M. J. Kim (Co-PI) "Single TiO2 nanotube devices for photo and chemical sensors" NSF-NER, $128,442 07/2007 - 06/2008 : "This proposal was recommended for award by NSF selection committee but it was declined due to institutional error."
• J.Kim (PI) Development of Core Technology for 50nm MOSFET Fabrication COSAR(Consortium Of Semiconductor Advanced Research) (subcontract from Hanyang U.), $120,523  (EJS Match: $80,000) 9/2005 -8/2007 2 %
• J.Kim (PI), M. Kim "Stand-Alone Nanotube Device Technology," CNMT (Center for Nano-Materials and Technology) (subcontract from Kookmin U.),  $190,000 (EJS Match: $ 50,000) 10/2005 - 2/2007. ($160,730)  3 %
• J. Kim (PI), R. Wallace, M. Kim, B. Gnade (Co-PIs) "Morphology, Bonding and Diffusion Studies of Metal/High-k Stacks" SEMATECH 09/2006 - 08/2007, $100,000  (EJS Matching $32,000) 2 %
• J.Kim (UTD-PI), C.Kim (UTA-PI)  "Exploration of New Barrier Materials for Future Generation Microelectronic Devices" UTA - UTD Joint Institutional Seed Research Program 3/2006 - 2/2007, $20,000 1 %
• J.Kim (PI) Unrestricted Gift Samsung Electronics Co. $40,000 1 %

New Technology May Lead to Prolonged Power in Mobile Devices

Researchers from The University of Texas at Dallas have created technology that could be the first step toward wearable computers with self-contained power sources or, more immediately, a smartphone that doesn’t die after a few hours of heavy use.

This technology, published online in Nature Communications, taps into the power of a single electron to control energy consumption inside transistors, which are at the core of most modern electronic systems.

New Technology May Lead to Prolonged Power in Mobile Devices

Researchers from The University of Texas at Dallas have created technology that could be the first step toward wearable computers with self-contained power sources or, more immediately, a smartphone that doesn’t die after a few hours of heavy use.

This technology, published online in Nature Communications, taps into the power of a single electron to control energy consumption inside transistors, which are at the core of most modern electronic systems.