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Professional Preparation
Ph.D. - Materials Science and Engineering University of Texas at Austin - 1994
M.S. - Metallurgical Engineering Seoul National University - 1988
B.S. - Metallurgical Engineering Seoul National University - 1986
Research Areas
Research Interests
Gate Stack Engineering for the Next Generation Complementary Metal-oxide-semiconductor (CMOS) Applications Nano-structure Materials and Devices for Nanoelectronics Novel Atomic Layer Deposition (ALD) Applications Novel Memory Device Materials, Fabrication and Applications Nano-sensor Fabrication and ApplicationsR
Publications
J. Kim, S. Won, D. Jung, H. Yang, H. Shin, J. Lee, M. Sung, Consecutive Selective Deposition Using
Atomic Layer Deposition and Self Assembled Monolayers, (In Preparation) forthcoming - Publication
T. J. Park, P. Sivasubramani, B. E. Coss, B. Lee, R. M. Wallace, J. Kim, M. Rousseaus, X. Liu, H. Li,
J.-S. Lehn, D. Hong, D. Shenai, Reduction of residual C and N-related impurities by Al2O3 insertion
in atomic-layer-deposited La2O3 thin films, Electrochem. Solid.Lett. 14 (4) DOI:10.1149/1.3545965
(In print) forthcoming - Publication
B. Lee, A. Hande, H. Kim, R. M. Wallace, J. Kim, X. Liu, M. Rousseau, J. Yi,. H. Li, D. Shenai, and J.
Suydam, LaHfO nano-laminates for high-k gate dielectric applications, Micro. Electron. Eng.
(Submitted) forthcoming - Publication
K.J. Choi, B. Lee, S. J. McDonnell, R.M. Wallace, J. Kim, Step by step in-situ X-ray photoelectron
spectroscopy investigation on ALD Al2O3 films using TMA and water on Si substrate, (In
Preparation) forthcoming - Publication
D. Cha, B. Lee, M. J. Kim, J. Kim, Fabrication and characteristic of stand-alone single TiO2
nanotube devices, Adv. Function. Mater. (In Prep.) forthcoming - Publication
C. Bae, Y. Yoon, W. S. Yoon, J. Moon, J. Kim, H. Shin, Hierarchical titania nanotubes with selfbranched crystalline nanorods, ACS Appl. Mater. Interface, 2, pp. 1581-1587 (2010) 2010 - Publication
A. P. Kirk, M. Milojevic, J. Kim, R. M. Wallace, An in-situ examination of atomic layer deposited
alumina/InAs (100) interfaces, Appl. Phys. Lett., 96, 202905 (2010) 2010 - Publication
Appointments
Professor U. of Texas at Dallas [2013–Present]
Associate Professor U. of Texas at Dallas [2008–2013]
Associate Professor Univ. of Texas at Dallas [2005–2013]
Director Kookmin U [2004–2005]
Research Institute of Nano Technology and Science
Visiting Researcher Univ. of Texas [2004–2004]
Associate Professor Kookmin U [2003–2005]
Prog. In Nano-Sci & Tech.
Visiting Researcher U of North Texas [2003–2003]
Associate Professor Kookmin U [2002–2005]
Assistant Professor Kookmin U [1998–2002]
Fulltime Lecturer Kookmin U [1996–1998]
Projects
Fabrication and characterization of single stand-alone TiO2 nanotube devices
2008–2008D. Cha, K. Lee, B. Lee, J. Wang, M. Kim, H. Shin, J. Lee, J. Kim, Fabrication and characterization of single stand-alone TiO2 nanotube devices, 2008 TMS Annual Meeting and Exhibition, New Orleans/LS, Mar. 9-13 (2008)
GaAs MOS frequency dispersion reduction by surface oxide removal and passivation
2007–2007C. Hinkle, A. Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. Aguirre-Tostado, K. Choi, J. Kim, R. Wallace, GaAs MOS frequency dispersion reduction by surface oxide removal and passivation, IEEE-SISC (2007)
XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs
2007–2007F. Aguirre-Tostado, M. Milojevic, S. McDonnell, K. Choi, J. Kim, R. Wallace, T. Yang, Y. Xuan, D. Zemlynanov, T. Shen, Y. Wu, J. Woodall, P. Ye, XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs, IEEE-SISC (2007)
Phase transformation of sputtered TaxNy thin films as a function of nitrogen and doping element concentrations
2007–2007B. Coss, F. Aguirre-Tostado, R. Wallace and J. Kim, Phase transformation of sputtered TaxNy thin films as a function of nitrogen and doping element concentrations, 2007 Fall MRS, Boston, Nov. (2007)
Study of interface electromigration mechanism in Cu/barrier interconnects
2007–2007J. Kim, N. Michael, C. Kim, Y. Park, R. Augur, J. Kim, Study of interface electromigration mechanism in Cu/barrier interconnects, The Sixth Pacific Rim International Conference on Advanced Materials and Processing, Jeju/Korea, Nov. 5-9, 2007
Additional Information
Honors and awards
Selected Outstanding Research by Korean Ministry Of Science and Technology, (2004) Press Released
Best Paper Award at 2004 Korean Metals and Materials Society (2004)
Best Poster Award at 2003 Korean Materials Research Society Meeting (2003)
Named in "Who's Who in Science and Engineering (2000)"
Named in "Who's Who in the World (1999)"
Korean Government Oversea Scholarship (1990 - 1993)
Grants Received
J. Kim (PI), M. J. Kim (Co-PI) "Single TiO2 nanotube devices for photo and chemical sensors" NSF-NER, $128,442 07/2007 - 06/2008 : "This proposal was recommended for award by NSF selection committee but it was declined due to institutional error."
J.Kim (PI) Development of Core Technology for 50nm MOSFET Fabrication COSAR(Consortium Of Semiconductor Advanced Research) (subcontract from Hanyang U.), $120,523 (EJS Match: $80,000) 9/2005 -8/2007 2 %
J.Kim (PI), M. Kim "Stand-Alone Nanotube Device Technology," CNMT (Center for Nano-Materials and Technology) (subcontract from Kookmin U.), $190,000 (EJS Match: $ 50,000) 10/2005 - 2/2007. ($160,730) 3 %
J. Kim (PI), R. Wallace, M. Kim, B. Gnade (Co-PIs) "Morphology, Bonding and Diffusion Studies of Metal/High-k Stacks" SEMATECH 09/2006 - 08/2007, $100,000 (EJS Matching $32,000) 2 %
J.Kim (UTD-PI), C.Kim (UTA-PI) "Exploration of New Barrier Materials for Future Generation Microelectronic Devices" UTA - UTD Joint Institutional Seed Research Program 3/2006 - 2/2007, $20,000 1 %
J.Kim (PI) Unrestricted Gift Samsung Electronics Co. $40,000 1 %
Researchers from The University of Texas at Dallas have created technology that could be the first step toward wearable computers with self-contained power sources or, more immediately, a smartphone that doesn’t die after a few hours of heavy use.
This technology, published online in Nature Communications, taps into the power of a single electron to control energy consumption inside transistors, which are at the core of most modern electronic systems.
Researchers from The University of Texas at Dallas have created technology that could be the first step toward wearable computers with self-contained power sources or, more immediately, a smartphone that doesn’t die after a few hours of heavy use.
This technology, published online in Nature Communications, taps into the power of a single electron to control energy consumption inside transistors, which are at the core of most modern electronic systems.