Jiyoung Kim

Professor - Material Sciences & Engineering
jiyoung.kim@utdallas.edu
972-883-6412
RL4410
Tags: Electrical Engineering Mechanical Engineering Materials Science and Engineering Computer Engineering

Professional Preparation

Ph.D. - Materials Science and Engineering
University of Texas at Austin - 1994
M.S. - Metallurgical Engineering
Seoul National University - 1988
B.S. - Metallurgical Engineering
Seoul National University - 1986

Research Areas

Research Interests
Gate Stack Engineering for the Next Generation Complementary
Metal-oxide-semiconductor (CMOS) Applications
Nano-structure Materials and Devices for Nanoelectronics
Novel Atomic Layer Deposition (ALD) Applications
Novel Memory Device Materials, Fabrication and Applications
Nano-sensor Fabrication and ApplicationsR

Publications

T. J. Park, P. Sivasubramani, B. E. Coss, B. Lee, R. M. Wallace, J. Kim, M. Rousseaus, X. Liu, H. Li, J.-S. Lehn, D. Hong, D. Shenai, Reduction of residual C and N-related impurities by Al2O3 insertion in atomic-layer-deposited La2O3 thin films, Electrochem. Solid.Lett. 14 (4) DOI:10.1149/1.3545965 (In print) forthcoming - Publication
J. Kim, S. Won, D. Jung, H. Yang, H. Shin, J. Lee, M. Sung, Consecutive Selective Deposition Using Atomic Layer Deposition and Self Assembled Monolayers, (In Preparation) forthcoming - Publication
B. Lee, A. Hande, H. Kim, R. M. Wallace, J. Kim, X. Liu, M. Rousseau, J. Yi,. H. Li, D. Shenai, and J. Suydam, LaHfO nano-laminates for high-k gate dielectric applications, Micro. Electron. Eng. (Submitted) forthcoming - Publication
K.J. Choi, B. Lee, S. J. McDonnell, R.M. Wallace, J. Kim, Step by step in-situ X-ray photoelectron spectroscopy investigation on ALD Al2O3 films using TMA and water on Si substrate, (In Preparation) forthcoming - Publication
K.J. Chung, et al., Micro. Electron. Eng. (Submitted) forthcoming - Publication
D. Cha, B. Lee, M. J. Kim, J. Kim, Fabrication and characteristic of stand-alone single TiO2 nanotube devices, Adv. Function. Mater. (In Prep.) forthcoming - Publication
T. J. Park, K. J. Chung, H. C. Kim, J. H. Ahn, R. M. Wallace, J. Kim, Reduced metal contamination in atomic-layer-deposited high-k films grown using O3 oxidant generated without N2 assistance, Electrochem. Solid-State Lett., 13 (8), pp. G65-67 (2010) 2010 - Publication
B. Coss, C. Smith, W. Y. Loh, K. J. Chung, P. Majhi, R. M. Wallace, J. Kim, R. Jammy, Contact Resistance Reduction to FinFET Source/Drain Using Dielectric Dipole Mitigated Schottky Barrier Height Tuning, 2010 Tech Digest Int. Electron Devices Meet., 26-3 (2010) 2010 - Publication
B. Lee, G. Mordi, M.J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, KJ Cho, J. Kim, L. Colombo, Charactreristics of high-k Al2O3 dielectric using ozone based atomic layer deposition, Appl. Phys. Lett., 97, 043107 (2010) This paper is also linked Virtual Journal of Nanoscale Science and Technology by American Institute of Physics 2010 - Publication
C. Bae, Y. Yoon, W. S. Yoon, J. Moon, J. Kim, H. Shin, Hierarchical titania nanotubes with selfbranched crystalline nanorods, ACS Appl. Mater. Interface, 2, pp. 1581-1587 (2010) 2010 - Publication

Appointments

Professor
U. of Texas at Dallas [2013–Present]
Associate Professor
U. of Texas at Dallas [2008–2013]
Associate Professor
Univ. of Texas at Dallas [2005–2013]
Visiting Researcher
Univ. of Texas [2004–2004]
Director
Kookmin U [2004–2005]
Research Institute of Nano Technology and Science
Associate Professor
Kookmin U [2003–2005]
Prog. In Nano-Sci & Tech.
Visiting Researcher
U of North Texas [2003–2003]
Associate Professor
Kookmin U [2002–2005]
Assistant Professor
Kookmin U [1998–2002]
Fulltime Lecturer
Kookmin U [1996–1998]

Projects

"Step by step in-situ X-ray photoelectron spectroscopy investigate ion ALD Al2O3 films using TMA and water,"
2007–2007 K. J. Choi, S. J. McDonnell, R. M. Wallace, J. Kim, Step by step in-situ X-ray photoelectron spectroscopy investigate ion ALD Al2O3 films using TMA and water, AVS meeting, Seattle/WA, Oct. (2007) Accepted
XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs
2007–2007 F. Aguirre-Tostado, M. Milojevic, S. McDonnell, K. Choi, J. Kim, R. Wallace, T. Yang, Y. Xuan, D. Zemlynanov, T. Shen, Y. Wu, J. Woodall, P. Ye, XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs, IEEE-SISC (2007)
GaAs MOS frequency dispersion reduction by surface oxide removal and passivation
2007–2007 C. Hinkle, A. Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. Aguirre-Tostado, K. Choi, J. Kim, R. Wallace, GaAs MOS frequency dispersion reduction by surface oxide removal and passivation, IEEE-SISC (2007)
Study of interface electromigration mechanism in Cu/barrier interconnects
2007–2007 J. Kim, N. Michael, C. Kim, Y. Park, R. Augur, J. Kim, Study of interface electromigration mechanism in Cu/barrier interconnects, The Sixth Pacific Rim International Conference on Advanced Materials and Processing, Jeju/Korea, Nov. 5-9, 2007
Fabrication and characterization of single stand-alone TiO2 nanotube devices
2008–2008 D. Cha, K. Lee, B. Lee, J. Wang, M. Kim, H. Shin, J. Lee, J. Kim, Fabrication and characterization of single stand-alone TiO2 nanotube devices, 2008 TMS Annual Meeting and Exhibition, New Orleans/LS, Mar. 9-13 (2008)

Additional Information

Honors and awards
  • Selected Outstanding Research by Korean Ministry Of Science and Technology, (2004) Press Released
  • Best Paper Award at 2004 Korean Metals and Materials Society (2004)
  • Best Poster Award at 2003 Korean Materials Research Society Meeting (2003)
  • Named in "Who's Who in Science and Engineering (2000)"
  • Named in "Who's Who in the World (1999)"
  • Korean Government Oversea Scholarship (1990 - 1993)
Grants Received
  • J. Kim (PI), M. J. Kim (Co-PI) "Single TiO2 nanotube devices for photo and chemical sensors" NSF-NER, $128,442 07/2007 - 06/2008 : "This proposal was recommended for award by NSF selection committee but it was declined due to institutional error."
  • J.Kim (PI) Development of Core Technology for 50nm MOSFET Fabrication COSAR(Consortium Of Semiconductor Advanced Research) (subcontract from Hanyang U.), $120,523  (EJS Match: $80,000) 9/2005 -8/2007 2 %
  • J.Kim (PI), M. Kim "Stand-Alone Nanotube Device Technology," CNMT (Center for Nano-Materials and Technology) (subcontract from Kookmin U.),  $190,000 (EJS Match: $ 50,000) 10/2005 - 2/2007. ($160,730)  3 %
  • J. Kim (PI), R. Wallace, M. Kim, B. Gnade (Co-PIs) "Morphology, Bonding and Diffusion Studies of Metal/High-k Stacks" SEMATECH 09/2006 - 08/2007, $100,000  (EJS Matching $32,000) 2 %
  • J.Kim (UTD-PI), C.Kim (UTA-PI)  "Exploration of New Barrier Materials for Future Generation Microelectronic Devices" UTA - UTD Joint Institutional Seed Research Program 3/2006 - 2/2007, $20,000 1 %
  • J.Kim (PI) Unrestricted Gift Samsung Electronics Co. $40,000 1 %

News Articles

New Technology May Lead to Prolonged Power in Mobile Devices
Researchers from The University of Texas at Dallas have created technology that could be the first step toward wearable computers with self-contained power sources or, more immediately, a smartphone that doesn’t die after a few hours of heavy use.

This technology, published online in Nature Communications, taps into the power of a single electron to control energy consumption inside transistors, which are at the core of most modern electronic systems.
New Technology May Lead to Prolonged Power in Mobile Devices
Researchers from The University of Texas at Dallas have created technology that could be the first step toward wearable computers with self-contained power sources or, more immediately, a smartphone that doesn’t die after a few hours of heavy use.

This technology, published online in Nature Communications, taps into the power of a single electron to control energy consumption inside transistors, which are at the core of most modern electronic systems.