IBM Postdoctoral Fellow - Chemical Engineering
Stanford University - 1974
Professional Preparation
Doctor of Philosophy - Electrical Engineering
Stanford University - 1973
Stanford University - 1973
M.S. - Electrical Engineering
Stanford University - 1970
Stanford University - 1970
B.S. - Physics
University of California at Berkeley - 1968
University of California at Berkeley - 1968
Publications
Snyder JP; Helm CR; Nishi Y. Analysis of the potential distribution in the channel region of a platinum silicided source; drain metal oxide semiconductor field effect transistor. APPLIED PHYSICS LETTER 1999, Vol 74, Iss 22, pp 3407-3409. Times Cited: 2. Source item page count: 3. MAY 31; IDS No.: 199HC. 1999 - Publication
Holander-Gleixner S; Robinson HG; Helms CR.
Derivation of an analytical model to calculate junction depth in HgCdTe
Photodiodes. JOURNAL OF APPLIED PHYSICS 1998, Vol 83, Iss 3, pp 1299-1304.
Times Cited: 7.
Source item page count: 6.
FEB 1. 1998 - Publication
Park HS; Helms CR; Ko DH. Effect of surface iron on photoconductivity carrier recombination lifetime of p-type
silicon.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 1998, Vol 145, Iss 5, pp 1724-
1729.
Times Cited: 1.
Source item page count: 6.
MAY. 1998 - Publication
Mao DH; Syllaios AJ; Robinson HG; Helms CR. Optical absorption of un-implanted and implanted HgCdTe. JOURNAL OF ELECTRONIC MATERIALS 1998, Vol 27, Iss 6, pp 703-708.
Times Cited: 2.
Source item page count: 6.
JUN. 1998 - Publication
Williams BL; Robinson HG; Helms CR.
Mercury interstitial generation in ion implanted mercury cadmium telluride.
JOURNAL OF ELECTRONIC MATERIALS 1998, Vol 27, Iss 6, pp 583-588.
Times Cited: 7.
Source item page count: 6.
JUN. 1998 - Publication
Park H; Ko DH; Apte P; Helms CR; Saraswat KC.
In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas. ELECTROCHEMICAL AND SOLID STATE LETTERS 1998, Vol 1, Iss 2, pp 77-79.
Times Cited: 6. Source item page count: 3. AUG.
IDS No.: 182GD. 1998 - Publication
Holander-Gleixner S; Robinson HG; Helms CR.
Simulation of HgTe/CdTe interdiffusion using fundamental point defect mechanisms.
JOURNAL OF ELECTRONIC MATERIALS 1998, Vol 27, Iss 6, pp 672-679.
Times Cited: 3.
Source item page count: 8. JUN. 1998 - Publication
Mao DH; Robinson HG; Bartholomew DU; Helms CR.
Device modeling of HgCdTe vertically photodiodes.
JOURNAL OF ELECTRONIC MATERIALS 1997, Vol 26, Iss 6, pp 678-682.
Times Cited: 5.
Source item page count: 5.
JUN. 1997 - Publication
Appointments
Lars Magnus Professor and Dean
University of Texas at Dallas [2003–2008]
University of Texas at Dallas [2003–2008]
President & CEO
International SEMATECH [2001–2003]
International SEMATECH [2001–2003]
Director
Texas Instruments [1999–2001]
Texas Instruments [1999–2001]
Professor Emeritus
Stanford University [1999–Present]
Stanford University [1999–Present]
Director
Texas Instruments [1997–1998]
Texas Instruments [1997–1998]
Member
Stanford University [1990–1995]
Stanford University [1990–1995]
Professor(Research)
Stanford University [1980–2000]
Stanford University [1980–2000]
Senior Research Associate
Stanford University [1976–1980]
Stanford University [1976–1980]
Research Physicist
Exxon Research & Engineering Co [1974–1976]
Exxon Research & Engineering Co [1974–1976]
Additional Information
Honors
- IBM Postdoctoral fellow
- Hertz Foundation Fellow
- Phi Beta Kappa
- Tau Beta Pi
Professional Societies
- Organized numerous symposia for the Materials Research Society
- Organized numerous symposia for the Electrochemical Society
- Various posts for the IEEE Interface Specialists Conference - mid - 80's