Massimo Fischetti

PhD - Physics
University of California Santa Barbara - 1978

Laurea
University of Milan - 1974

S. Jin, M. V. Fischetti, and T.-w. Tang, “Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity”, J. Appl. Phys. 102, 083715 (2007) [32]. 2007 - Publication

Massimo V. Fischetti, Deborah A. Neumayer, and Eduard A. Cartier, Effective electron mobility in Si inversion layers in MOS systems with a high- insulator: The role of remote phonon scattering, J. Appl. Phys. 90, 4587-4608 (2001) [309]. 2001 - Publication

M. V. Fischetti, Master equation approach to the study of electronic transport in small semiconductor devices, Phys. Rev. B 59, 4901-4917 (1999) [42]. 1999 - Publication

M. V. Fischetti and S. E. Laux, Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys, J. Appl. Phys. 80, 2234-2252 (1996) [465]. 1996 - Publication

M. V. Fischetti and S. E. Laux, “Monte Carlo study of electron transport in Si inversion layers”, Phys. Rev. B 48, 2244-2274 (1993) [283]. 1993 - Publication

M. V. Fischetti, Monte Carlo Simulation of Electron Transport in Technologically Significant Semiconductors of the Diamond and Zinc-blende Structures. Part I: Homogeneous Transport, IEEE Trans. Electron Devices, ED-38, 634-649 (1991) [265]. 1991 - Publication

M. V. Fischetti and S. E. Laux, “Monte Carlo Analysis of Electron Transport in Small Semiconductor Devices Including Band-Structure and Space-Charge Effects”, Phys. Rev. B 38, 9721-9745 (1988) [504]. 1988 - Publication

Texas Instruments Distinguished Chair in Nanoelectronics
University of Texas at Dallas [2010–Present]
Engineering

2 New Profs Expand University's Nanotech Strength Texas Instruments Funds New Chairs to Advance Revolutionary Technologies

Two leading experts in the mechanics and materials of high-tech engineering have joined the Erik Jonsson School of Engineering and Computer Science at UT Dallas, further expanding the University’s position as a leading nanotechnology research center. Each of the new faculty members will be the inaugural holder of an endowed chair, both of which have been funded by Texas Instruments. The two new faculty members are: Dr. Massimo Fischetti: Previously a professor of electrical and computer engineering at the University of Massachusetts Amherst, Fischetti holds a Texas Instruments Distinguished Chair in Nanoelectronics. He earned a PhD in physics from the University of California, Santa Barbara, in 1978, and his research involves the theory of electronic transport in semiconductors and the limits of semiconductor scaling. Dr. Julia W.P. Hsu: Previously a scientist in the Center for Integrated Nanotechnologies at Sandia National Labs, Hsu also will hold a Texas Instruments Distinguished Chair in Nanoelectronics. She earned a PhD in physics from Stanford University in 1991, and her research focuses on interfacial phenomena in organic-inorganic hybrid systems, the structure and electrical properties of self-assembled monolayers, and the chemical patterning of surfaces using conventional and soft lithographic techniques.